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2SC3663 Datasheet Transistor

Manufacturer: Kexin Semiconductor

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Overview

SMD Type NPN Epitaxial Silicon Transistor 2SC3663 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Low-voltage, low-current, low-noise and high-gain NF = 3.0 dB TYP.

@VCE = 1 V, IC = 250 PA, f = 1.0 GHz GA = 3.5 dB TYP.

@VCE = 1 V, IC = 250 PA, f = 1.0 GHz Ideal for battery drive of pagers, compact radio equipment cordless phones, etc.

Key Features

  • 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Mini mold package, ideal for hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 15 8 2 5 50 150 -65 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
NEC Logo 2SC3663 NPN EPITAXIAL SILICON TRANSISTOR NEC

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