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2SC4390 Datasheet NPN Epitaxial Planar Silicon Transistor

Manufacturer: Kexin Semiconductor

Overview

SMD Type Transistors NPN Epitaxial Planar Silicon Transistor.

Key Features

  • Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Large current capacity (IC=2A). Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). 15V). High VEBO (VEBO Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 20 10 15 2 4 0.4 500 150 -55 to +1.