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2SC4390 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of MBIT process.
  • High DC current gain (hFE=800 to 3200).
  • Large current capacity (IC=2A).
  • Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V).
  • High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN2958B 2SC4390 SANYO Semiconductors DATA SHEET 2SC4390 NPN Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications Features • Adoption of MBIT process. • High DC current gain (hFE=800 to 3200). • Large current capacity (IC=2A). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V). • High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta=25°C Conditions Mounted on a ceramic board (250mm2✕0.