Kexin Electronics 2SC4390
NPN Epitaxial Planar Silicon Transistor
| Part No. | 2SC4390 |
|---|---|
| Datasheet | 2SC4390 Download |
| Manufacturer | Kexin Electronics |
| Description | NPN Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
FEATURES
Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Large current capacity (IC=2A). Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). 15V). High VEBO (VEBOABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 20 10 15 2 4 0.4 500 150 -55 to +150 Unit V V V A A A mW 1 Free Datasheet SMD Type 2SC4390ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 15V, IE=0 VEB = 10V, IC=0 VCE =2V , IC = 500mA VCE = 10...