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2SC4505 Datasheet NPN Epitaxial Planar Silicon Transistors

Manufacturer: Kexin Semiconductor

Overview

SMD Type Transistors NPN Epitaxial Planar Silicon Transistors.

Key Features

  • High breakdown voltage. (BVCEO = 400V) Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA. High switching speed, typically tf = 1.7ìs at Ic =100mA. Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current Symbol VCBO VCEO VEBO IC Rating 400 400 7 0.1 0.2 CollectorPower Dissipation Junotion Temperature storage Temperature.
  • 1 Single pulse pw=20ms,Duty=1/2.
  • 2 When mounted on a 40X40X0.7 mm cer.