Datasheet4U Logo Datasheet4U.com

2SD1006 Datasheet NPN Silicon Epitaxial Transistor

Manufacturer: Kexin Semiconductor

📥 Download Datasheet

Overview

SMD Type NPN Silicon Epitaxial Transistor 2SD1006 Transistors.

Key Features

  • High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse).
  • Collector l power dissipation Junction temperature Storage temperature.
  • . PW 10ms,duty cycle 50% Symbol VCBO VCEO VEBO IC IC(pu) Pc Tj Tstg Rating 100 100 5 0.7 1.2 2 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Base-emitter voltage.
  • Collector cut.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
NEC Logo 2SD1006 NPN TRANSISTOR NEC
AiT Semiconductor Logo 2SD1006 NPN SILICONEPITAXIAL TRANSISTORS AiT Semiconductor

More Datasheets from Kexin Semiconductor

Part Number Description
2SD1000 NPN Silicon Epitaxial Transistor
2SD1001 NPN Silicon Epitaxial Transistor
2SD1005 NPN Silicon Epitaxial Transistor
2SD1007 NPN Silicon Epitaxial Transistor
2SD1033 Silicon NPN Transistor
2SD1048 NPN Epitaxial Planar Silicon Transistors
2SD1119 Silicon NPN Transistor
2SD1220 Silicon NPN Epitaxial Transistor
2SD1221 NPN Transistors
2SD1249 Silicon NPN Transistor