2SD1963

The 2SD1963 is Power Transistor designed by Kexin.

Product Overview

Kexin

Part number	2SD1963
Manufacturer	Kexin
File Size	67.22 KB
Description	Power Transistor
Datasheet	2SD1963_Kexin.pdf
Additional preview pages of the 2SD1963 datasheet.

Low saturation voltage. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 20 6 3 0.5 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltag.

📁 Similar Datasheet

2SD1960 - NPN Silicon Transistor (Rohm)
2SD1961 - (2SD1961 - 2SD2098) Low Frequency Silicon Power NPN Transistor (ROHM Electronics)
2SD1962M - (2SD1961 - 2SD2098) Low Frequency Silicon Power NPN Transistor (ROHM Electronics)
2SD1964 - Silicon NPN Transistor (Panasonic Semiconductor)
2SD1966 - NPN Transistor (INCHANGE)
2SD1902 - PNP/NPN Triple Diffused Planar Type Silicon Transistors (Sanyo Semicon Device)
2SD1903 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SD1904 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

Other Datasheets by Kexin

Published: Oct 30, 2013 |