2SD1963 Datasheet PDF

Transistors Power transistor (50V, 3A) 2SD1963 2SD1963 zFeatures 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SB1308. zExternal dimensions (Unit : mm) MPT3 4.5 0.5 1.6 1.5 4.0 2.5 (1) (2) (3) 1.0 0.4 0.4 0.5 0.4 (1)Base 1.5 1.5 3.0 (2)Collector (3)Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO 50 Collector-emitter voltage VCEO 20 Emitter-base voltage VEBO 6 Collector current 3 IC 5 0.5 Collector power dissipation PC 2.0 Junction temperature Tj 150 Storage temperature Tstg −55 to 150 ∗1 Single pulse, Pw=10ms ∗2 When mounted on a 40×40×0.7mm ceramic board. Unit V V V A(DC) A(Pulse) ∗1 W W ∗2 °C °C zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Collector-base breakdown voltage BVCBO 50 Collector-emitter breakdown voltage BVCEO 20 Emitter-base breakdown voltage BVEBO 6 Collector cutoff current ICBO − Emitter cutoff curre...