Datasheet4U Logo Datasheet4U.com

2SD1963 - Power Transistor

Key Features

  • Low saturation voltage. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 20 6 3 0.5 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltag.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1963 Power Transistor Rohm
2SD1960 NPN Silicon Transistor Rohm
2SD1961 (2SD1961 - 2SD2098) Low Frequency Silicon Power NPN Transistor ROHM Electronics
2SD1962M (2SD1961 - 2SD2098) Low Frequency Silicon Power NPN Transistor ROHM Electronics
2SD1964 Silicon NPN Transistor Panasonic Semiconductor

Other Datasheets by Kexin Semiconductor

Part Number Description
2SD1918 Silicon NPN Transistor
2SD1000 NPN Silicon Epitaxial Transistor
2SD1001 NPN Silicon Epitaxial Transistor
2SD1005 NPN Silicon Epitaxial Transistor
2SD1006 NPN Silicon Epitaxial Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Power Transistor 2SD1963 Transistors Features Low saturation voltage. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 20 6 3 0.5 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE IC=50ìA IC=1mA IE=50ìA VCB=40V VEB=5V VCE=2V, IC=0.