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AO4604 - Complementary Trench MOSFET

Key Features

  • s.
  • N-Channel : VDS (V) = 30V ID = 6.9 A (VGS = 10V) RDS(ON) ＜ 28mΩ (VGS = 10V) RDS(ON) ＜ 42mΩ (VGS = 4.5V).
  • P-Channel : VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) ＜ 52mΩ (VGS = -10V) RDS(ON) ＜ 87mΩ (VGS = -4.5V) SOP-8 Unit:mm +0.040.21 -0.02 1.50 0.15 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 D2 D1 G2 S2 N-channel G1 S1 P-channel.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power.

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SMD Type Complementary Trench MOSFET AO4604 (KO4604) MOSFET ■ Features ● N-Channel : VDS (V) = 30V ID = 6.9 A (VGS = 10V) RDS(ON) ＜ 28mΩ (VGS = 10V) RDS(ON) ＜ 42mΩ (VGS = 4.5V) ● P-Channel : VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) ＜ 52mΩ (VGS = -10V) RDS(ON) ＜ 87mΩ (VGS = -4.5V) SOP-8 Unit:mm +0.040.21 -0.02 1.50 0.15 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 D2 D1 G2 S2 N-channel G1 S1 P-channel ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.