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AO4604 Datasheet Preview

AO4604 Datasheet

Complementary Trench MOSFET

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SMD Type
Complementary Trench MOSFET
AO4604 (KO4604)
MOSFET
Features
N-Channel :
VDS (V) = 30V
ID = 6.9 A (VGS = 10V)
RDS(ON) 28mΩ (VGS = 10V)
RDS(ON) 42mΩ (VGS = 4.5V)
P-Channel :
VDS (V) = -30V
ID = -5 A (VGS = -10V)
RDS(ON) 52mΩ (VGS = -10V)
RDS(ON) 87mΩ (VGS = -4.5V)
SOP-8
Unit:mm
1.50 0.15
1 S2
2 G2
3 S1
4 G1
5 D1
6 D1
7 D2
8 D2
D2 D1
G2
S2
N-channel
G1
S1
P-channel
Absolute Maximum Ratings Ta = 25
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Lead
Junction Temperature
Storage Temperature Range
TA=25
TA=70
TA=25
TA=70
t 10s
Steady-State
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJL
TJ
Tstg
N-Channel
P-Channel
30 -30
±20
6.9 -5
5.8 -4.2
30 -20
2
1.44
62.5
110
40
150
-55 to 150
Unit
V
A
W
/W
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Kexin

AO4604 Datasheet Preview

AO4604 Datasheet

Complementary Trench MOSFET

No Preview Available !

SMD Type
MOSFET
Complementary Trench MOSFET
AO4604 (KO4604)
N-Channel Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
ID(ON)
gFS
Ciss
Coss
Crss
Rg
Test Conditions
ID=250μA, VGS=0V
VDS=24V, VGS=0V
VDS=24V, VGS=0V, TJ=55
VDS=0V, VGS=±20V
VDS=VGS , ID=250uA
VGS=10V, ID=6.9A
VGS=10V, ID=6.9A TJ=125
VGS=4.5V, ID=5A
VGS=4.5V, VDS=5V
VDS=5V, ID=5A
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Qrr
IS
VSD
VGS=10V, VDS=15V, ID=6.9A
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN=3Ω
IF= 6.9A, dI/dt= 100A/us
IS=1A,VGS=0V
Min Typ Max Unit
30 V
1
uA
5
±100 nA
1 3V
28
38 mΩ
42
20 A
10 15.4
S
680 820
102 pF
77
1.2 2
Ω
13.84 17
6.74 8.1
1.82
nC
3.2
4.6
4.1
20.6 ns
5.2
16.5 20
7.8 nC
3A
1V
Note : The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
Marking
Marking
4604
KA****
2 www.kexin.com.cn


Part Number AO4604
Description Complementary Trench MOSFET
Maker Kexin
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AO4604 Datasheet PDF






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