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BSP20A - NPN Silicon Epitaxial Transistor

Key Features

  • High Voltage: V(BR)CEO of 250 and 350 Volts. Available in 12 mm Tape and Reel +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (DC) Total Power Dissipation @ TA = 25.
  • Derate above 25 Storage Temperature Range Junction Temperature Thermal Resistance fr.

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SMD Type NPN Silicon Epitaxial Transistor BSP20A SOT-223 6.50 +0.2 -0.2 Transistors Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features High Voltage: V(BR)CEO of 250 and 350 Volts. Available in 12 mm Tape and Reel +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (DC) Total Power Dissipation @ TA = 25 * Derate above 25 Storage Temperature Range Junction Temperature Thermal Resistance from Junction-to-Ambient Maximum Temperature for Soldering Purposes Time in Solder Bath Tstg TJ RèJA TL Symbol VCEO VCBO VEBO IC PD Rating 250 300 5 1000 0.8 6.