High current (max. 100 mA). Low voltage (max. 12 V). NPN Switching Transistor
BSV52
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
+0.12.4 -0.1
0-0.1 +0.10.38
-0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1+0.05 -0.01
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Peak collector current
ICM
Peak base current
IBM
To.
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SMD Type
TransistIoCrs
Features
High current (max. 100 mA). Low voltage (max. 12 V).
NPN Switching Transistor
BSV52
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
+0.12.4 -0.1
0-0.1 +0.10.38
-0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1+0.05 -0.01
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Peak collector current
ICM
Peak base current
IBM
Total power dissipation
Ptot
Storage temperature
Tstg
Junction temperature
Tj
Operating ambient temperature
Ramb
Thermal resistance from junction to ambient *
Rth j-a
* Transistor mounted on an FR4 printed-circuit board.