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FMMT591 Datasheet

Medium Power Transistor

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SMD Type
TransistIoCrs
Features
Low equivalent on-resistance.
Medium Power Transistor
FMMT591
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Base current
Power dissipation
Operating and storage temperature range
Symbol
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj,Tstg
Rating
-80
-60
-5
-2
-1
-200
500
-55 to +150
Unit
V
V
V
A
A
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Static Forward Current TransferRatio
Current-gain-bandwidth product
Output capacitance
* Pulse test: tp 300 ìs; d 0.02.
Marking
Marking
591
Symbol
Testconditons
V(BR)CBO IC=-100ìA
V(BR)CEO IC=-10mA
V(BR)EBO IE=-100ìA
ICBO VCB=-60V
IEBO VEB=-4V
VCE(sat) IC=-1A,IB=-100mA
VBE(sat) IC=-1A,IB=-100mA
VBE(ON) IC=-1A,VCE=-5V
IC=-1mA, VCE=-2V*
IC=-500mA,VCE=-5V
hFE
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
fT IC=-50mA,VCE=-10V,f=100MHz
Cobo VCB=-10V,f=1MHz
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-80 V
-60 V
-5 V
-100 nA
-100 nA
-0.6 V
-1.2 V
-1.0 V
100
100 300
80
40
150 MHz
10 pF
www.kexin.com.cn 1


Part Number FMMT591
Description Medium Power Transistor
Maker Kexin
PDF Download

FMMT591 Datasheet PDF






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