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FTD2011 Datasheet Dual N-Channel Enhancement Mode MOSFET

Manufacturer: Kexin Semiconductor

Overview

SMD Type MOSFET Dual N-Channel Enhancement Mode MOSFET FTD2011.

Key Features

  • s.
  • RDS(ON)=30mΩ Max. @VGS=4V.
  • RDS(ON)=45mΩ Max. @VGS=2.5V D1 S1 S1 G1 TSSOP-8 Unit: mm 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 D2 7 : Source2 S2 8 : Drain2 S2 G2.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous -Pulsed (NOTE 1) Power Dissipation (NOTE 2) Thermal Resistance,Junction- to-Ambient Operating Junction and Storage Temperature Range Note: 1. PW≤10μs, duty c.