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FTD2019 - Dual N-Channel Enhancement Mode MOSFET

Key Features

  • s.
  • RDS(ON)=28mΩ Max. @VGS=4V.
  • RDS(ON)=35mΩ Max. @VGS=2.5V D1 S1 S1 D1 TSSOP-8 Unit: mm 1 : Drain1 2 : Source1 3 : Source1 D2 4 : Gate1 S2 5 : Gate2 6 : Source2 S2 7 : Source2 G2 8 : Drain2.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous -Pulsed (NOTE 1) Power Dissipation (NOTE 2) Thermal Resistance,Junction- to-Ambient Operating Junction and Storage Temperature Range Note: 1. PW≤10μs, duty c.

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SMD Type Transistors Dual N-Channel Enhancement Mode MOSFET FTD2019 ■ Features ● RDS(ON)=28mΩ Max. @VGS=4V ● RDS(ON)=35mΩ Max. @VGS=2.5V D1 S1 S1 D1 TSSOP-8 Unit: mm 1 : Drain1 2 : Source1 3 : Source1 D2 4 : Gate1 S2 5 : Gate2 6 : Source2 S2 7 : Source2 G2 8 : Drain2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous -Pulsed (NOTE 1) Power Dissipation (NOTE 2) Thermal Resistance,Junction- to-Ambient Operating Junction and Storage Temperature Range Note: 1. PW≤10μs, duty cycle≤1% 2. Mounted on a ceramic board (1000mm2×0.8mm) Symbol VDS VGS ID IDM PD RθJA Tj.Tstg Rating 30 ±10 5 20 1.3 96 -55 to 150 Unit V V A A W ℃/W ℃ 1 www.kexin.com.