The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Ordering number : ENN7911
FTD2019A
FTD2019A
Features
• • • •
N-Channel Silicon MOSFET Transistor
Load Switching Applications
Low ON-resistance. 2.5V drive. Mount height 1.1mm. Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2!0.8mm)1unit Mounted on a ceramic board (1000mm2!0.8mm) Conditions Ratings 30 ±12 6 40 1.3 1.