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IRF540NS - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 100V.
  • ID = 33 A (VGS = 10V).
  • RDS(ON) ＜ 44mΩ (VGS = 10V).
  • Fast Switching D TO-263 9.65 (Min) 10.67 (Max) 90 ~ 93 5.33 (Min) Unit:mm 6.22 (min) 1.65 (max) 4.06 (Min) 4.83 (Max) 1.14 (Min) 1.40 (Max) 9.65 (MAX) 8.51 (MIN) 15.88 (MAX) 14.61 (MIN) G S 1.27~1.78 1.14~1.40 0.51~0.99 2.54 0.43~0.63 1 Gate 2 Drain 3 Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Curre.

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Full PDF Text Transcription for IRF540NS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRF540NS. For precise diagrams, and layout, please refer to the original PDF.

SMD Type N-Channel MOSFET IRF540NS (KRF540NS) MOSFET ■ Features ● VDS (V) = 100V ● ID = 33 A (VGS = 10V) ● RDS(ON) ＜ 44mΩ (VGS = 10V) ● Fast Switching D TO-263 9.65 (Min)...

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10V) ● RDS(ON) ＜ 44mΩ (VGS = 10V) ● Fast Switching D TO-263 9.65 (Min) 10.67 (Max) 90 ~ 93 5.33 (Min) Unit:mm 6.22 (min) 1.65 (max) 4.06 (Min) 4.83 (Max) 1.14 (Min) 1.40 (Max) 9.65 (MAX) 8.51 (MIN) 15.88 (MAX) 14.61 (MIN) G S 1.27~1.78 1.14~1.40 0.51~0.99 2.54 0.43~0.63 1 Gate 2 Drain 3 Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Linear Derating Factor Thermal Resistance.Junction- to-Ambient Thermal Resistance.

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