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KDB6030L - N-Channel MOSFET

Key Features

  • 52A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V RDS(ON) = 0.020 @ VGS = 4.5 V Low gate charge (typical 34 nC). Low Crss (typical 175 pF). Fast switching speed. +5 .2 8 0.2 -0.2 +8 .7 0.2 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +1 .2 7 0.1 -0.1 5.60 + 0 .2 -0.2 1.27+0.1 -0.1 0.1max 2.54 5.08+0.2 -0.2 +0.1 -0.1 0.81+0.1 -0.1 2.54 +2 .5 4 0.2 -0.2 0.4+0.2 -0.2 1 5 . 2 5 11Ggaattee 22Ddrraaiinn 33Ssoouurrccee Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Ga.

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SMD Type TransistIoCrs N-Channel Logic Level Enhancement Mode Field Effect Transistor KDB6030L Features 52A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V RDS(ON) = 0.020 @ VGS = 4...

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res 52A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V RDS(ON) = 0.020 @ VGS = 4.5 V Low gate charge (typical 34 nC). Low Crss (typical 175 pF). Fast switching speed. +5 .2 8 0.2 -0.2 +8 .7 0.2 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +1 .2 7 0.1 -0.1 5.60 + 0 .2 -0.2 1.27+0.1 -0.1 0.1max 2.54 5.08+0.2 -0.2 +0.1 -0.1 0.81+0.1 -0.1 2.54 +2 .5 4 0.2 -0.2 0.4+0.2 -0.2 1 5 .

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