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KI001PW - P-Channel MOSFET

Features

  • s.
  • VDS (V) =-15V.
  • ID =-3 A (VGS =-10V).
  • RDS(ON) < 85mΩ (VGS =-4.5V).
  • RDS(ON) < 95mΩ (VGS =-2.5V).
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID PD TJ Tstg Rating -15 ±12 -3 0.2 150 -55 to 150 Unit V A W ℃ 1 Gate 2 Source 3 Drain.
  • Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage.

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Datasheet Details

Part number KI001PW
Manufacturer Kexin
File Size 304.29 KB
Description P-Channel MOSFET
Datasheet download datasheet KI001PW Datasheet
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Full PDF Text Transcription

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SMD Type P-Channel MOSFET KI001PW MOSFET ■ Features ● VDS (V) =-15V ● ID =-3 A (VGS =-10V) ● RDS(ON) < 85mΩ (VGS =-4.5V) ● RDS(ON) < 95mΩ (VGS =-2.5V) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID PD TJ Tstg Rating -15 ±12 -3 0.2 150 -55 to 150 Unit V A W ℃ 1 Gate 2 Source 3 Drain ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Symbol VDSS IDSS IGSS VGS(th) RDS(On) Test Conditions ID=-250μA, VGS=0V VDS=-15V, VGS=0V, TJ=25℃ VDS=0V, VGS=±10V VDS=VGS ID=-250μA VGS=-4.
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