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KO3409 - P-Channel MOSFET

Key Features

  • VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 200m (VGS = -4.5V) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 0-0.1 +0.10.38 -0.1 11.. BGasaete 22.. ESmiotutrecre 33.. cDolrlaeicntor Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current Power Dissipation TA=25 TA=70.

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Part Number Description Manufacturer

Other Datasheets by Kexin Semiconductor

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type P-Channel Enhancement Mode Field Effect Transistor AO3409 (KO3409) MOSFET Features VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 200m (VGS = -4.5V) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 0-0.1 +0.10.38 -0.1 11.. BGasaete 22..ESmiotutrecre 33..cDolrlaeicntor Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current Power Dissipation TA=25 TA=70 Themal Resistance. Junction-to-Ambient Themal Resistance. Junction-to-Case Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJC TJ, TSTG Rating -30 20 -2.6 -2.2 -20 1.