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KO3407 - P-Channel Enhancement MOSFET

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Features

  • VDS (V) = -30V ID = -4.1 A RDS(ON) 52m RDS(ON) 87m (VGS = -10V) (VGS = -4.5V) D G S +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22.. ESmiotutrecre 33.. cDolrlaeicntor Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation Ta = 25℃ Ta = 70℃.

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Datasheet Details

Part number KO3407
Manufacturer Kexin
File Size 1.35 MB
Description P-Channel Enhancement MOSFET
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SMD Type P-Channel Enhancement MOSFET AO3407 (KO3407) MOSFEITC Features VDS (V) = -30V ID = -4.1 A RDS(ON) 52m RDS(ON) 87m (VGS = -10V) (VGS = -4.5V) D G S +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22..ESmiotutrecre 33..cDolrlaeicntor Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient t ≤10s Steady State Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJL TJ Tstg Rating -30 ±20 -4.1 -3.
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