Datasheet4U Logo Datasheet4U.com

KO3407 - P-Channel Enhancement MOSFET

Key Features

  • VDS (V) = -30V ID = -4.1 A RDS(ON) 52m RDS(ON) 87m (VGS = -10V) (VGS = -4.5V) D G S +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22.. ESmiotutrecre 33.. cDolrlaeicntor Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation Ta = 25℃ Ta = 70℃.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Kexin Semiconductor

Part Number Description
KO3400 N-Channel MOSFET
KO3401 P-Channel MOSFET
KO3402 N-Channel MOSFET
KO3403 P-Channel MOSFET
KO3404 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type P-Channel Enhancement MOSFET AO3407 (KO3407) MOSFEITC Features VDS (V) = -30V ID = -4.1 A RDS(ON) 52m RDS(ON) 87m (VGS = -10V) (VGS = -4.5V) D G S +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22..ESmiotutrecre 33..cDolrlaeicntor Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient t ≤10s Steady State Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJL TJ Tstg Rating -30 ±20 -4.1 -3.