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KO4264 Datasheet Preview

KO4264 Datasheet

N-Channel MOSFET

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KO4264 pdf
SMD Type
N-Channel MOSFET
AO4264 (KO4264)
Features
VDS (V) = 60V
ID = 12 A (VGS = 10V)
RDS(ON) 11mΩ (VGS = 10V)
RDS(ON) 13.5mΩ (VGS = 4.5V)
SOP-8
D
MOSFET
1.50 0.15
1 Source
2 Source
3 Source
4 Gate
5 Drain
6 Drain
7 Drain
8 Drain
G
S
Absolute Maximum Ratings Ta = 25
Drain-Source Voltage
Gate-Source Voltage
VDS Spike @ 10us
Parameter
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Lead
Junction Temperature
Storage Temperature Range
TA=25
TA=70
L=0.1mH
TA=25
TA=70
t 10s
Steady-State
Symbol
VDS
VGS
VSPIKE
ID
IDM
IAS
EAS
PD
RthJA
RthJL
TJ
Tstg
Rating
60
±20
72
12
9
48
36
65
3.1
2
40
75
24
150
-55 to 150
Unit
V
A
mJ
W
/W
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Kexin
Kexin

KO4264 Datasheet Preview

KO4264 Datasheet

N-Channel MOSFET

No Preview Available !

KO4264 pdf
SMD Type
MOSFET
N-Channel MOSFET
AO4264 (KO4264)
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
gFS
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Qrr
IS
VSD
Test Conditions
ID=250 uA, VGS=0V
VDS=60V, VGS=0V
VDS=60V, VGS=0V, TJ=55
VDS=0V, VGS=±20V
VDS=VGS , ID=250uA
VGS=10V, ID=12A
VGS=10V, ID=12A TJ=125
VGS=4.5V, ID=10A
VDS=5V, ID=12A
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=30V, ID=12A
VGS=10V, VDS=15V, RL=1.25Ω,
RGEN=3Ω
IF= 12A, dI/dt= 500A/us
IS=1A,VGS=0V
Min Typ Max Unit
60 V
1
uA
5
±100 nA
1.4 2.5 V
11
19 mΩ
13.5
50 S
2007
177 pF
12.5
0.6 1.8 Ω
25.5 40
11 20
nC
5.5
2.5
8.5
3.5
27 ns
3
15
55 nC
4A
1V
Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.
Marking
Marking
4264
KC****
2 www.kexin.com.cn


Part Number KO4264
Description N-Channel MOSFET
Maker Kexin
Total Page 4 Pages
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