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MBR320 - Schottky Barrier Rectifier

Key Features

  • ƽ Metal silicon junction, majority carrier conduction ƽ Low power loss, high efficiency ƽ High forward surge current capability DO-201AD 0.210 (5.3) 0.190 (4.8) DIA. 1.0 (25.4) MIN. 0.375 (9.5) 0.285 (7.2) 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4) MIN. Dimensions in inches and (millimeters) Ƶ Absolute Maximum Ratings and Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz, resistive or inductive load, for capacitive load c.

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Other Datasheets by Kexin Semiconductor

Part Number Description
MBR3100 Schottky Barrier Rectifier
MBR330 Schottky Barrier Rectifier
MBR340 Schottky Barrier Rectifier
MBR350 Schottky Barrier Rectifier
MBR360 Schottky Barrier Rectifier

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DIP Type Schottky Barrier Rectifier MBR320 ~ MBR3100 TransDisiotodress Ƶ Features ƽ Metal silicon junction, majority carrier conduction ƽ Low power loss, high efficiency ƽ High forward surge current capability DO-201AD 0.210 (5.3) 0.190 (4.8) DIA. 1.0 (25.4) MIN. 0.375 (9.5) 0.285 (7.2) 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4) MIN. Dimensions in inches and (millimeters) Ƶ Absolute Maximum Ratings and Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%.