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MBR320M - SCHOTTKY BARRIER RECTIFIERS

Key Features

  • epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
  • Extremelv Low vF.
  • Low Stored Charge, Majority Carrier Conduction.
  • Low Power Loss/High Efficiency.
  • High Surge Capacity II.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

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MBR320 Axial Lead Rectifiers
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MBR330M SCHOTTKY BARRIER RECTIFIERS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® MOTOROLA MBR320M MBR330M MBR340M SCHOTTKY BARRIER RECTIFIERS 3 AMPERE 20, 30, 40 VOLTS HOT CARRIER POWER RECTIFIERS . employing the Schottky Barrier principle in a large area metal-ta-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.