Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry Features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, high- frequency inverters, free wheeling diodes, and polarity protection diodes.
- Extremely Low vF
- Low Power Loss/High Efficiency
- Highly Stable Oxide Passivated Junction
- Low Stored Charge, Majority Carrier Conduction
Mechanical Characteristics:
- Case: Epoxy, Molded
- Weight: 1.1 gram (approximately)
- Finish: All External Surfaces Corrosion...
