UTM2054 Datasheet | Kexin Semiconductor

Features - VDS (V) = 20V - ID = 5 A (VGS = 10V) - RDS(ON) ＜ 40mΩ (VGS = 10V) - RDS(ON) ＜ 54mΩ (VGS = 4.5V) - RDS(ON) ＜ 130mΩ (VGS = 2.5V) - Fast switching capability Drain 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source Gate Source - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD TJ Tstg Rating 20 ±16 5 20 1.47 150 -55 to 150 Unit V A W ℃ .kexin..cn 1 SMD Type N-Channel MOSFET UTM2054 (KTM2054) - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) Static Drain-Source On-Resistance RDS(On) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Diode Forward Voltage Note.1: Pulse width≦300μs, Duty cycle≦2% Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VSD Test Conditions ID=250μA, VGS=0V VDS=16V, VGS=0V VDS=0V, VGS=±16V VDS=VGS , ID=250μA VGS=10V, ID=5A (Note.1) VGS=4.5V, ID=3.5A (Note.1) VGS=2.5V, ID=2.5A (Note.1) VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=5A VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω IS=3A,VGS=0V (Note.1) MOSFET...