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AP2012P3C-P22 - Phototransistor

Description

z Made with NPN silicon phototransistor chips

Features

  • z 2.0 mm x 1.25 mm SMD LED, 1.1 mm thickness z Mechanically and spectrally matched to the infrared emitting LED lamp z Water clear lens z Package: 2000 pcs / reel z Moisture sensitivity level: 3 z RoHS compliant.

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Datasheet Details

Part number AP2012P3C-P22
Manufacturer Kingbright
File Size 457.26 KB
Description Phototransistor
Datasheet download datasheet AP2012P3C-P22 Datasheet

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Full PDF Text Transcription

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AP2012P3C-P22 2.0 x 1.25 mm Phototransistor DESCRIPTION z Made with NPN silicon phototransistor chips FEATURES z 2.0 mm x 1.25 mm SMD LED, 1.1 mm thickness z Mechanically and spectrally matched to the infrared emitting LED lamp z Water clear lens z Package: 2000 pcs / reel z Moisture sensitivity level: 3 z RoHS compliant APPLICATIONS z Infrared applied systems z Optoelectronic switches z Photodetector control circuits z Sensor technology PACKAGE DIMENSIONS RECOMMENDED SOLDERING PATTERN (units : mm; tolerance : ± 0.1) Confidential ABSOLUTE MAXIMUM RATINGS at TA=25°C Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3.
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