MMBT9014C
MMBT9014
NPN Silicon Epitaxial Planar Transistors
For switching and AF amplifier applications
As plementary types the PNP transistors MMBT9015 is remended.
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL
VCBO VCEO VEBO
IC Ptot Tj Ts
Characteristics at Ta = 25℃
PARAMETER
DC Current Gain at VCE = 5 V, IC = 1 m A
MMBT9014B MMBT9014C
MMBT9014D
Collector Cutoff Current at VCB = 50 V
Emitter Cutoff Current at VEB = 5 V
Collector Base Breakdown Voltage at IC = 100 µA
Collector Emitter Breakdown Voltage at IC = 1 m A
Emitter Base Breakdown Voltage at IE = 100 µA
Collector Emitter Saturation Voltage at IC = 100 m A, IB = 5 m A
Base Emitter Saturation Voltage at IC = 100 m A, IB = 5 m A
Gain Bandwidth Product at VCE = 5 V, IC = 10 m A
Output Capacitance at VCB = 10 V, f = 1 MHz
Noise Figure at VCE = 5 V,...
