10N65 Description
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10N65 Key Features
- 10A, 650V, RDS(on)=0.63Ω @VGS=10 V
- Low gate charge ( typical 45 nC)
- Low Crss ( typical 12pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Continuous (TC=25°C)
- Continuous (TC=100°C)
- Pulsed (Note 1)
- Derate above 25°C