10N65 Datasheet | Specifications & PDF Download

Production specification N-Channel Enhancement Mode Field Effect Transistor BL10N65 FEATURES  Extremely High dv/dt Capability.  100% AvalancheTtes

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Silan Microelectronics SVF10N65T/F/K/S_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F/K/S is an N-channel enhancement mode po

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PFP10N65 / PFF10N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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NVB110N65S3F MOSFET – Power, Single N-Channel, D2PAK 650 V, 110 mW, 30 A Description SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage

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Silan Microelectronics SVF10N65CF/K/FJH_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CF/K/FJH is an N-channel enhancement mode

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Silicon N-Channel Power MOSFET CS10N65F A9R ○R General Description： CS10N65F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel

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UNISONIC TECHNOLOGIES CO., LTD 10N65 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, des

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SEMICONDUCTOR TECHNICAL DATA KF10N65F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristic

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Silicon N-Channel Power MOSFET ○R CS10N65 ARR-G General Description： CS10N65 ARR-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the se

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FCP110N65F — N-Channel SuperFET® II FRFET® MOSFET December 2014 FCP110N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features • 700

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FCB110N65F — N-Channel SuperFET® II FRFET® MOSFET August 2016 FCB110N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features • 700 V

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GPT10N65 / GPT10N65D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to pro

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Silicon N-Channel Power MOSFET CS10N65 A8HD ○R General Description： CS10N65 A8HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel

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N R N-CHANNEL MOSFET JCS10N65T MAIN CHARACTERISTICS Package ID 9.5 A VDSS 650 V Rdson（@Vgs=10V） 0.95Ω Qg 34 nC z z z UPS APPLICAT

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WML10N65VD, WMK10N65VD, WMH10N65VD, WMM10N65VD WMN10N65VD, WMO10N65VD, WMP10N65VD, WMG10N65VD 650V 0.8Ω Super Junction Power MOSFET Description WMOST

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WML10N65VD, WMK10N65VD, WMH10N65VD, WMM10N65VD WMN10N65VD, WMO10N65VD, WMP10N65VD, WMG10N65VD 650V 0.8Ω Super Junction Power MOSFET Description WMOST

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10N65 650V N-Channel MOSFET. General Description ShenZhen LuGuang Electronic Technology. Co., Ltd. Awarded ISO9001:2015; ISO14001:2015; IATF16949:201

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UNISONIC TECHNOLOGIES CO., LTD UTG10N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UT

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LIPTAI ■ Applications • Power factor correction（PFC） • Switched mode power supplies(SMPS) • Uninterruptible Power Supply（UPS） ■ Features • Low RDS(ON)

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