LGE 10N65
This Power MOSFET is produced by HSDQ using its own advanced planar stripe DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies,active power factor correction based on half bridge topology.| Part No. | 10N65 |
|---|---|
| Datasheet | 10N65 Download |
| Manufacturer |  LGE |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
ShenZhen LuGuang Electronic Technology. Co., Ltd. Awarded ISO9001:2015; ISO14001:2015; IATF16949:2016; Email:sales05@lgesemi.com Web: Tel: 0086-755-23981105 Fax: 0086-755-23981125 Mobile/WhatsApp:+86-18676792337 Skype ID: jokucnFEATURES
● 10A, 650V, RDS(on)=0.63Ω @VGS=10 V● Low gate charge ( typical 45 nC)
● Low Crss ( typical 12pF)
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability TO-220F Package 2 1 12 3 1. Gate 2. Drain 3. Source 3 Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current - Continuous (TC=25°C) - Continuous (TC=100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC=25°C) - Derate above 25°C Tj ,Tstg TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds * Drain current...
