Datasheet Summary
10N65 650V N-Channel MOSFET.
General Description
ShenZhen LuGuang Electronic Technology. Co., Ltd. Awarded ISO9001:2015; ISO14001:2015; IATF16949:2016; Email:sales05@lgesemi. Web: .lgesemi. Tel: 0086-755-23981105 Fax: 0086-755-23981125 Mobile/WhatsApp:+86-18676792337 Skype ID: jokucn
Features
- 10A, 650V, RDS(on)=0.63Ω @VGS=10 V
- Low gate charge ( typical 45 nC)
- Low Crss ( typical 12pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
This Power MOSFET is produced by HSDQ using its own advanced planar stripe DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and...
