10N65
Overview
ShenZhen LuGuang Electronic Technology. Awarded ISO9001:2015; ISO14001:2015; IATF16949:2016; Email:sales05@ Web: Tel: 0086-755-23981105 Fax: 0086-755-23981125 Mobile/WhatsApp:+86-18676792337 Skype ID: jokucn.
- 10A, 650V, RDS(on)=0.63Ω @VGS=10 V
- Low gate charge ( typical 45 nC)
- Low Crss ( typical 12pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability This Power MOSFET is produced by HSDQ using its own advanced planar stripe DMOS advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies,active power factor correction based on half bridge topology. TO-220F Package 2 1 12 3
- Drain
- Source 3 Symbol VDSS ID IDM
