Datasheet4U Logo Datasheet4U.com

10N65 - N-Channel MOSFET

General Description

ShenZhen LuGuang Electronic Technology.

Co., Ltd.

Key Features

  • 10A, 650V, RDS(on)=0.63Ω @VGS=10 V.
  • Low gate charge ( typical 45 nC).
  • Low Crss ( typical 12pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability This Power MOSFET is produced by HSDQ using its own advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mo.

📥 Download Datasheet

Datasheet Details

Part number 10N65
Manufacturer LGE
File Size 547.32 KB
Description N-Channel MOSFET
Datasheet download datasheet 10N65 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
10N65 N-CHANNEL MOSFET CHONGQING PINGYANG
10N65 N-CHANNEL POWER MOSFET Unisonic Technologies
10N65 650V N Channel Power MOSFET JINAN JINGHENG
10N65-C N-CHANNEL POWER MOSFET Unisonic Technologies
10N65-Q N-CHANNEL POWER MOSFET Unisonic Technologies

Other Datasheets by LGE

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
10N65 650V N-Channel MOSFET. General Description ShenZhen LuGuang Electronic Technology. Co., Ltd. Awarded ISO9001:2015; ISO14001:2015; IATF16949:2016; Email:sales05@lgesemi.com Web: www.lgesemi.com Tel: 0086-755-23981105 Fax: 0086-755-23981125 Mobile/WhatsApp:+86-18676792337 Skype ID: jokucn Features • 10A, 650V, RDS(on)=0.63Ω @VGS=10 V • Low gate charge ( typical 45 nC) • Low Crss ( typical 12pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability This Power MOSFET is produced by HSDQ using its own advanced planar stripe DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.