| Part Number | 10N65 Datasheet |
|---|---|
| Manufacturer | LGE |
| Overview |
ShenZhen LuGuang Electronic Technology. Co., Ltd. Awarded ISO9001:2015; ISO14001:2015; IATF16949:2016; Email:sales05@lgesemi.com Web: Tel: 0086-755-23981105 Fax: 0086-755-23981125 Mob.
* 10A, 650V, RDS(on)=0.63Ω @VGS=10 V * Low gate charge ( typical 45 nC) * Low Crss ( typical 12pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability This Power MOSFET is produced by HSDQ using its own advanced planar stripe DMOS technology.This advanced technology has been especi. |
10N65 Datasheet and Specifications PDF
The 10N65 is a N-Channel MOSFET.
| Part Number | 10N65 Datasheet |
|---|---|
| Description | N-CHANNEL MOSFET |
| Manufacturer | CHONGQING PINGYANG |
| Overview |
10N65(F,B,H)
10A mps,650 Volts N-CHANNEL MOSFET
FEATURE
10A,650V,RDS(ON)=0.85Ω@VGS=10V/5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220.
* 10A,650V,RDS(ON)=0.85Ω@VGS=10V/5A * Low gate charge * Low Ciss * Fast switching * 100% avalanche tested * Improved dv/dt capability TO-220AB 10N65 ITO-220AB 10N65F TO-263 10N65B TO-262 10N65H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gat. |
| Part Number | 10N65 Datasheet |
|---|---|
| Description | N-CHANNEL POWER MOSFET |
| Manufacturer | Unisonic Technologies |
| Overview |
The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanch.
* RDS(ON) < 0.86Ω@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
* SYMBOL Power MOSFET * ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N65L-TA3-T 10N65G-TA3-T 10N65L-TF1-T 10N65G-TF. |
| Part Number | 10N65 Datasheet |
|---|---|
| Description | 650V N Channel Power MOSFET |
| Manufacturer | JINAN JINGHENG |
| Overview |
R
SEMICONDUCTOR
FEATURES
● RDS(ON)<1.0Ω @ VGS=10V ● Fast switching capability ● Low gate charge ● Lead free in compliance with EU RoHS directive.
MECHANICAL DATA
● Case:TO-220,ITO-220,TO-262,TO-263 Pa.
* RDS(ON)<1.0Ω @ VGS=10V * Fast switching capability * Low gate charge * Lead free in compliance with EU RoHS directive. MECHANICAL DATA * Case:TO-220,ITO-220,TO-262,TO-263 Package 10N65 650V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 650 1.0 @ VGS =10V TO-220AB 10N65 ITO-220A. |