10N65F - GaN Enhancement-mode Power Transistor

tokmas

General Description

650V GaN-on-Silicon Enhancement-mode Power Transistor in TO220F-3L Package

Key Features

Enhancement-mode transistor - normally-OFF power switch.
Ultra-high switching frequency.
No reverse-recovery charge.
Low gate charge, low output charge.
Qualified for industrial.

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10N65F gan enhancement-mode power transistor by tokmas - Datasheet Preview

Datasheet Details

Part number	10N65F
Manufacturer	tokmas
File Size	5.09 MB
Description	GaN Enhancement-mode Power Transistor
Datasheet	10N65F Datasheet

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GaN Enhancement-mode Power Transistor CID10N65F General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in TO220F-3L Package Features • Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching frequency • No reverse-recovery charge • Low gate charge, low output charge • Qualified for industrial applications according to JEDEC standards • ESD safeguard • RoHS, Pb-free Applications • AC-DC converters • DC-DC converters • Totem pole PFC • Fast battery charging • High-density power conversion • High-efficiency power conversion Table 1 Key Performance Parameters at Tj = 25 oC Parameters VDS, max RDS(on), max QG, typ ID, Pulse QOSS @ 400 V Qrr Values 650 200 2.