10N65F
10N65F is 650V N-Channel Enhancement Mode MOSFET manufactured by EVVO.
Description
The 10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features
VDS = 650V ID =10A RDS(ON) < 0.9Ω @ VGS=10V （Type：0.75Ω） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC)
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Value TO-220F TO-220
VDSS
Drain-Source Voltage (VGS = 0V)
Continuous Drain Current
Pulsed Drain Current (note1)
Gate-Source Voltage
±30
Single Pulse Avalanche Energy (note2)
Avalanche Current (note1)
Repetitive Avalanche Energy note1)
Power Dissipation (TC = 25ºC)
TJ, Tstg
Operating Junction and Storage Temperature Range
-55~+150
Rth JC
Thermal Resistance, Junction-to-Case
Rth JA
Thermal Resistance, Junction-to-Ambient
Unit
V A A V m J A m J W ºC ºC/W ºC/W
650V N-Channel Enhancement Mode MOSFET
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Symbol
Parameter...
