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10N65F - 650V N-Channel Enhancement Mode MOSFET

General Description

The 10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • VDS = 650V ID =10A RDS(ON) < 0.9Ω @ VGS=10V （Type：0.75Ω）.

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Datasheet Details

Part number 10N65F
Manufacturer EVVO
File Size 2.48 MB
Description 650V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet 10N65F Datasheet

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10N65F 650V N-Channel Enhancement Mode MOSFET Description The 10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 650V ID =10A RDS(ON) < 0.9Ω @ VGS=10V （Type：0.