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Production specification
N-Channel Enhancement Mode Field Effect Transistor BL10N65
FEATURES
Extremely High dv/dt Capability. 100% AvalancheTtested. Gate Charge Minimized. Very Good Manufacturing Reliabilty.
Pb
Lead-free
APPLICATIONS
N-channel Enhancement mode Effect Transistor. Switching Applications.
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VDS Drain-Source Voltage
600 V
VGS Gate -Source Voltage
ID
Maximum Drain Current(continuous) at TC=25℃ TC=100℃
IDM Drain Current(pulsed)Note1
PD Power Dissipation at TC=25℃
Vesd(G-S) G-S ESD (HBM C=100pF,R=1.5kΩ)
Single Pulse Avalanche Energy EAS (starting Tj=25℃,ID=IAR,VDD=50V)
dv/dt
Peak Diode Recovery Voltage Slope(Note2)
±30 10 5.
BL10N65 Datasheet
