BL10N65
BL10N65 is N-Channel Power Mosfet manufactured by Galaxy Microelectronics.
Production specification
N-Channel Enhancement Mode Field Effect Transistor BL10N65
Features
- Extremely High dv/dt Capability.
- 100% AvalancheTtested.
- Gate Charge Minimized.
- Very Good Manufacturing Reliabilty.
Pb
Lead-free
APPLICATIONS
- N-channel Enhancement mode Effect Transistor.
- Switching Applications.
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VDS Drain-Source Voltage
600 V
VGS Gate -Source Voltage
Maximum Drain Current(continuous) at TC=25℃ TC=100℃
IDM Drain Current(pulsed)Note1
PD Power Dissipation at TC=25℃
Vesd(G-S) G-S ESD (HBM C=100pF,R=1.5kΩ)
Single Pulse Avalanche Energy EAS...
