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BL10N60F - N-Channel Power MOSFET

Key Features

  • Fast Switching Pb.
  • ESD Improved Capability Lead-free.
  • ow Gate Charge (Typical Data:38nC).
  • Low Reverse transfer capacitances(Typical:15pF).
  • 100% Single Pulse avalanche energy Test.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET FEATURES  Fast Switching Pb  ESD Improved Capability Lead-free  ow Gate Charge (Typical Data:38nC)  Low Reverse transfer capacitances(Typical:15pF)  100% Single Pulse avalanche energy Test APPLICATIONS  Power switch circuit of adaptor and charger. Production specification BL10N60F ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-to-Source voltage VGS ID IDMa1 dv/dta3 Gate -Source voltage Continuous Drain current Continuous Drain current Tc=100°C Pulsed Drain current Peak Diode Recovery dv/dt PD Power Dissipation Value 600 ±30 10 6.4 40 5.0 50 VESD(G-S) Gate source ESD(HBM-C=100pF,R=1.