BL10N60F Datasheet | Galaxy Microelectronics

Silicon N-Channel Power MOSFET Features - Fast Switching Pb - ESD Improved Capability Lead-free - ow Gate Charge (Typical Data:38n C) - Low Reverse transfer capacitances(Typical:15p F) - 100% Single Pulse avalanche energy Test APPLICATIONS - Power switch circuit of adaptor and charger. Production specification ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-to-Source voltage ID IDMa1 dv/dta3 Gate -Source voltage Continuous Drain current Continuous Drain current Tc=100°C Pulsed Drain current Peak Diode Recovery dv/dt PD Power Dissipation Value ±30 10 6.4 40 5.0 VESD(G-S) Gate source ESD(HBM-C=100p F,R=1.5kΩ) TJ,Tstg TL Operating Junction and Storage Temperature Maximum Temperature for Soldering 150，-55 to +150 300 Units V V A A V/ns W ℃...