BL10N60F Overview
Key Features
- Fast Switching Pb
- ESD Improved Capability Lead-free
- ow Gate Charge (Typical Data:38nC)
- Low Reverse transfer capacitances(Typical:15pF)
- 100% Single Pulse avalanche energy Test
| Part | BL10N60F |
|---|---|
| Description | N-Channel Power MOSFET |
| Category | MOSFET |
| Manufacturer | Galaxy Microelectronics |
| Size | 332.08 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| BL10N65A | BELLING | Power Mosfet |