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1N17 - Schottky Barrier Rectifiers

Features

  • Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection.

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Datasheet Details

Part number 1N17
Manufacturer LGE
File Size 125.84 KB
Description Schottky Barrier Rectifiers
Datasheet download datasheet 1N17 Datasheet
Additional preview pages of the 1N17 datasheet.

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Other Datasheets by LGE
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Full PDF Text Transcription

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1N17-1N19 Schottky Barrier Rectifiers VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A Features Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications The plastic material carries U/L recognition 94V-0 Mechanical Data Case:JEDEC R--1,molded plastic Polarity: Color band denotes cathode Weight: 0.007 ounces,0.20 grams Mounting position: Any R-1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
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