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LGE

FMMT591 Datasheet Preview

FMMT591 Datasheet

PNP Transistor

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Features
— Low equivalent on-resistance
1. BASE
2. EMITTER
3. COLLECTOR
FMMT591
SOT-23 Transistor(PNP)
SOT-23
Marking :591
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-80
-60
-5
-1
500
150
-55-150
Units
V
V
V
A
mW
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CBO
V(BR)CEO1
V(BR)EBO
IC=-100μA, IE=0
IC=-10mA, IB=0
IE=-100μA, IC=0
Collector cut-off current
ICBO VCB=-60V, IE=0
Emitter cut-off current
IEBO VEB=-4V, IC=0
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
hFE(1)
hFE(2) 1
hFE(3) 1
hFE(4) 1
VCE(sat)1 1
VCE(sat)2 1
VBE(sat) 1
VBE1
VCE=-5V, IC=-1mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-1A
VCE=-5V, IC=-2A
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-1A, IB=-100mA
VCE=-5V, IC=-1A
Transition frequency
fT VCE=-10V,IC=-50mA,,f=100MHz
Collector output capacitance
Cob VCB=-10V,f=1MHz
1Measured under pulsed conditions, Pulse width=300μs, Duty cycle2%.
MIN TYP MAX UNIT
-80 V
-60 V
-5 V
-0.1 μA
-0.1 μA
100
100 300
80
15
-0.3 V
-0.6 V
-1.2 V
-1 V
150 MHz
10 pF




LGE

FMMT591 Datasheet Preview

FMMT591 Datasheet

PNP Transistor

No Preview Available !

Typical Characteristics
FMMT591
SOT-23 Transistor(PNP)


Part Number FMMT591
Description PNP Transistor
Maker LGE
PDF Download

FMMT591 Datasheet PDF






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