LSK170A Single N-Channel JFET
• ULTRA LOW NOISE (f =1khz): en = 0.9nV/√Hz
• High Breakdown Voltage: BVGSS = 40V min
• High Gain: Gfs = 22mS (typ)
• High Input Impedance:
20GΩ typ
•.
Which Cannot Tolerate High Values of Capacitance or Wide Ranges of IDSS
Applications
• Audio Amplifiers and Preamps.
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