T4M10T600B - Sensitive Gate Triacs Sillicon Bidirectional Thyristors

This page provides the datasheet information for the T4M10T600B, a member of the T4M10T-B-LITE Sensitive Gate Triacs Sillicon Bidirectional Thyristors family.

Product Overview

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Datasheet Details

Part number	T4M10T600B
Manufacturer	LITEON
File Size	409.16 KB
Description	Sensitive Gate Triacs Sillicon Bidirectional Thyristors
Datasheet	T4M10T600B Datasheet
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T4M10T600B Product details

Features

Sensitive Gate Allows Triggering by Microcontrollers and other Logic Circuits High Immunity to dv/dt - 50 V/us Minimum at 125℃ Commutating di/dt - 3.0 A/ms Minimum at 125℃ Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design On-State Current Rating of 4 Amperes RMS at 100℃ High Surge Current Capability - 40 Amperes Blocking Voltage to 800 Volts Rugged, Economical TO220AB Package Operational in Three Quadrants: Q1, Q2, and Q3 Pb-Free Package.

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T4M10T-B - Sensitive Gate Triacs Sillicon Bidirectional Thyristors

Published: Dec 3, 2018 |