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L2N7002DMT1G Datasheet Preview

L2N7002DMT1G Datasheet

Small Signal MOSFET

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LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SC–74
L2N7002DMT1G
S-L2N7002DMT1G
We declare that the material of product
compliance with RoHS requirements.
ESD Protected:1000V
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 M)
Drain Current
– Continuous TC = 25°C (Note 1.)
– Continuous TC = 100°C (Note 1.)
– Pulsed (Note 2.)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp 50 µs)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
VDSS
VDGR
ID
ID
IDM
Value
60
60
±115
±75
±800
Unit
Vdc
Vdc
mAdc
VGS
VGSM
±20 Vdc
±40 Vpk
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
RθJA
PD
RθJA
TJ, Tstg
556
300
2.4
417
-55 to
+150
°C/W
mW
mW/°C
°C/W
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
ORDERING INFORMATION
Device
Marking
Shipping
L2N7002DMT1G
S-L2N7002DMT1G
L2N7002DMT3G
S-L2N7002DMT3G
72D
72D
3000 Tape & Reel
10000 Tape & Reel
SC-74
115 mAMPS
60 VOLTS
R DS(on) = 7.5 W
N - Channel
Rev .O 1/4




LRC

L2N7002DMT1G Datasheet Preview

L2N7002DMT1G Datasheet

Small Signal MOSFET

No Preview Available !

LESHAN RADIO COMPANY, LTD.
L2N7002DMT1G , S-L2N7002DMT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID =250µAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 Vdc)
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
Gate–Body Leakage Current, Reverse
(VGS = –ā20 Vdc)
TJ = 25°C
TJ = 125°C
V(BR)DSS
IDSS
IGSSF
IGSSR
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
On–State Drain Current
(VDS 2.0 VDS(on), VGS = 10 Vdc)
Static Drain–Source On–State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
Static Drain–Source On–State Resistance
(VGS = 10 V, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
Forward Transconductance
(VDS 2.0 VDS(on), ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
VGS(th)
ID(on)
VDS(on)
rDS(on)
gFS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(V DD = 25 Vdc , ID ^ 500 mAdc,
RG = 25 , RL = 50 , Vgen = 10 V)
BODY–DRAIN DIODE RATINGS
td(on)
td(off)
Diode Forward On–Voltage
(IS = 115 mAdc, V GS = 0 V)
Source Current Continuous
(Body Diode)
VSD
IS
Source Current Pulsed
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
ISM
Min
60
1.0
500
80
Typ Max Unit
– – Vdc
– 1.0 µAdc
– 500
– 1.0 µAdc
– –1.0 µAdc
1.6 2 Vdc
– – mA
Vdc
– 3.75
– 0.375
Ohms
1.4 7.5
– 13.5
1.8 7.5
– 13.5
– – mmhos
17 50 pF
10 25 pF
2.5 5.0 pF
7 20 ns
11 40 ns
– –1.5 Vdc
– –115 mAdc
– –800 mAdc
Rev .O 2/4


Part Number L2N7002DMT1G
Description Small Signal MOSFET
Maker LRC
Total Page 6 Pages
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