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LRC

L2N7002FWT1G Datasheet Preview

L2N7002FWT1G Datasheet

Small Signal MOSFET

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LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
30 Volts
N–Channel SC70
We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
FEATURES
RDS(ON) 8@VGS=4V
RDS(ON) 13@VGS=2.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
Capable doing Cu wire bonding
ESD Protected:1000V
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
Load Switch
ORDERING INFORMATION
Device
Marking
Shipping
L2N7002FWT1G
S-L2N7002FWT1G
7F
3000 Tape & Reel
L2N7002FWT3G
S-L2N7002FWT3G
7F
10000 Tape & Reel
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 1.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 2.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Max Unit
225 mW
1.8 mW/°C
556
300
2.4
417
-55 to
+150
°C/W
mW
mW/°C
°C/W
°C
L2N7002FWT1G
S-L2N7002FWT1G
3
1
2
SC–70
Simplified Schematic
Gate 1
3 Drain
Source 2
(Top View)
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
7F
1
Gate
7F
M
2
Source
= Device Code
=Month Code
Rev .O 1/4




LRC

L2N7002FWT1G Datasheet Preview

L2N7002FWT1G Datasheet

Small Signal MOSFET

No Preview Available !

LESHAN RADIO COMPANY, LTD.
L2N7002FWT1G,S-L2N7002FWT1G
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Maximum Ratings
30
±20
Electrical Characteristics (Tj =25Unless Otherwise Specified)
Unit
V
V
Symbol Parameter
Limit
Min Typ
STATIC
BVDSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
30
0.8
IGSS
IDSS
RDS(ON)
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance*
VDS=0V, VGS=±20V
VDS=30V, VGS=0V
VGS=4V, ID=10mA
VGS=2.5V, ID=1mA
5
7
VSD Diode Forward Voltage *
IS=200mA, VGS=0V
DYNAMIC
Qg Total Gate Charge
4.9
Qgs Gate-Source Charge
VDS=25V, VGS=10V, ID=0.22A
2.1
Qgd Gate-Drain Charge
0.6
Ciss Input Capacitance
21
Coss
Output Capacitance
VDS=25V, VGS=0V, f=1MHz
10
Crss
td(on)
tr
td(off)
tf
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=5V, RL =500Ω
VGES=5V,RG=10Ω
2
10.1
7.3
31.3
28.2
Notes: * . Pulse test; pulse width 300us, duty cycle2%.
Max
1.5
±10
1
8
13
1.2
Unit
V
V
μA
μA
Ω
V
nC
pF
ns
Rev .O 2/4


Part Number L2N7002FWT1G
Description Small Signal MOSFET
Maker LRC
Total Page 5 Pages
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