LDTBG12GPWT1G transistor equivalent, bias resistor transistor.
1) High hFE.
300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage,
(VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against
rev.
Driver
zFeatures 1) High hFE.
300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage,
(VCE(sat)=0.4V at IC / IB=500m.
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