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LDTBG12GPWT1G - Bias Resistor Transistor

Features

  • 1) High hFE. 300 (Min. ) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
  • We declare that the material of product compliance with RoHS requirements. zStructure NPN epitaxial planar silicon transistor (with built-in resistor and zener diode) zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base.

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Datasheet Details

Part number LDTBG12GPWT1G
Manufacturer LRC
File Size 391.21 KB
Description Bias Resistor Transistor
Datasheet download datasheet LDTBG12GPWT1G Datasheet

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Full PDF Text Transcription

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPWT1G zApplications Driver zFeatures 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load). • We declare that the material of product compliance with RoHS requirements.
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