LDTBG12GPT1G
LESHAN RADIO PANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
LDTBG12GPT1G z Applications Driver z Features 1) High h FE.
300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage,
(VCE(sat)=0.4V at IC / IB=500m A / 5m A) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
- We declare that the material of product pliance with
Ro HS requirements. z Structure NPN epitaxial planar silicon transistor (with built-in resistor and zener diode) z Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC ICP
Tj Tstg
Limits -60±10 -60 ±10
-5 -1 -2 ∗1 0.5 2 ∗2 150
- 55 to +150
Unit V V V A A
°C °C
∗1 Pw≤10ms, Duty cycle≤1/2
∗2 When mounted on a 40×40×0.7 mm ceramic board.
DEVICE MARKING AND RESISTOR...
