LDTBG12GPWT1G - Bias Resistor Transistor

Product Overview

LRC

Part number	LDTBG12GPWT1G
Manufacturer	LRC
File Size	391.21 KB
Description	Bias Resistor Transistor
Datasheet	LDTBG12GPWT1G Datasheet
Additional preview pages of the LDTBG12GPWT1G datasheet.

1) High hFE. 300 (Min. ) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
We declare that the material of product compliance with RoHS requirements. zStructure NPN epitaxial planar silicon transistor (with built-in resistor and zener diode) zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base.

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Published: Aug 18, 2015 |