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LRC

LNTA4001NT1G Datasheet Preview

LNTA4001NT1G Datasheet

Small Signal MOSFET

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LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
20 V, 238 mA, Single, N-Channel, Gate
ESD Protection
Features
ăLow Gate Charge for Fast Switching
ăSmall 1.6 x 1.6 mm Footprint
ăESD Protected Gate
ăPb-Free Package is Available
ESDD PPrrootteecctteedd:2:105000VV
ES-SPDrePfirxotfeocrteAdu:t1o5m0o0tVive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Applications
ăPower Management Load Switch
ăLevel Shift
ăPortable Applications such as Cell Phones, Media Players,
Digital Cameras, PDA's, Video Games, Hand Held Computers, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Steady State = 25°C
VDSS
VGS
ID
20
±10
238
Power Dissipation
(Note 1)
Steady State = 25°C PD
300
Unit
V
V
mA
mW
Pulsed Drain Current
tP v 10 ms
Operating Junction and Storage Temperature
IDM
TJ,
TSTG
714
-55 to
150
mA
°C
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
ISD 238 mA
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction-to-Ambient – Steady State (Note 1)
RqJA
416 °C/W
1. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq.
[1 oz] including traces).
LNTA4001NT1G
S-LNTA4001NT1G
SC-89
V(BR)DSS
20 V
RDS(on)
Typ @ VGS
1.5 W @ 4.5 V
2.2 W @ 2.5 V
ID MAX
(Note 1)
238 mA
PIN CONNECTIONS
SC-89 (3-Leads)
Gate 1
3 Drain
Source 2
(Top View)
MARKING DIAGRAM
3
TF
12
TF = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
LNTA4001NT1G
S-LNTA4001NT1G
LNTA4001NT3G
S-LNTA4001NT3G
SC-89
SC-89
Shipping
3000 Tape & Reel
10000 Tape & Reel
Rev .O 1/5




LRC

LNTA4001NT1G Datasheet Preview

LNTA4001NT1G Datasheet

Small Signal MOSFET

No Preview Available !

LESHAN RADIO COMPANY, LTD.
LNTA4001NT1G , S-LNTA4001NT1G
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 2)
V(BR)DSS
IDSS
IGSS
VGS = 0 V, ID = 100 mA
VGS = 0 V, VDS = 20 V
VDS = 0 V, VGS = ±10 V
20
1.0
±100
V
mA
mA
Gate Threshold Voltage
Drain-to-Source On Resistance
Forward Transconductance
CAPACITANCES
VGS(TH)
VDS = 3 V, ID = 100 mA
0.5 1.0 1.5 V
RDS(on)
VGS = 4.5 V, ID = 10 mA
VGS = 2.5 V, ID = 10 mA
1.5 3.0
W
2.2 3.5
gFS VDS = 3 V, ID = 10 mA
50 mS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 3)
CISS
COSS
CRSS
VDS = 5 V, f = 1 MHz,
VGS = 0 V
11.5 20
10 15 pF
3.5 6.0
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
DRAIN-SOURCE DIODE CHARACTERISTICS
td(ON)
tr
td(OFF)
tf
VGS = 4.5 V, VDS = 5 V,
ID = 10 mA, RG = 10 W
13 ns
15
98 ns
60
Forward Diode Voltage
VSD VGS = 0 V, IS = 10 mA
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
0.66 0.8 V
Rev .O 2/5


Part Number LNTA4001NT1G
Description Small Signal MOSFET
Maker LRC
Total Page 5 Pages
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