LP2301ALT1G mosfet equivalent, p-channel mosfet.
* RDS(ON) ≦110mΩ@VGS=-4.5V
* RDS(ON) ≦150mΩ@VGS=-2.5V
* Super high density cell design for extremely low RDS(ON)
* S- Prefix for Automotive and Other Appl.
Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
APPLICATIONS
* Power Man.
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