LP2301ALT1G Datasheet and Specifications PDF

LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON) ≦110mΩ@VGS=-4.5V ● RDS(ON) ≦150mΩ@VGS=-2.5V ● Super high density cell design for extremely low RDS(ON) ● S- Prefix.

* RDS(ON) ≦110mΩ@VGS=-4.5V
* RDS(ON) ≦150mΩ@VGS=-2.5V
* Super high density cell design for extremely low RDS(ON)
* S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. APPLICATIONS
* Power Management in Note book .

LP2301ALT1G-VB LP2301ALT1G-VB Datasheet P-Channel 20-V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.060 at VGS = - 10 V - 4.0 - 20 0.065 at VGS = - 4.5 V .

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Load Switch
* PA Switch
* DC/DC Converters G1 S2 3D ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Sou.