LP2301ALT1G Description
20V P-Channel Enhancement-Mode MOSFET.
LP2301ALT1G Key Features
- RDS(ON) ≦110mΩ@VGS=-4.5V
- RDS(ON) ≦150mΩ@VGS=-2.5V
- Super high density cell design for extremely low RDS(ON)
- S- Prefix for Automotive and Other
LP2301ALT1G Applications
- Power Management in Note book