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LP2301LT1G - 20V P-Channel Enhancement-Mode MOSFET

Key Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM 1 2 SOT.
  • 23 (TO.
  • 236AB) ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ Pb-Free package is available 3 D G 1 2 Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current.

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Datasheet Details

Part number LP2301LT1G
Manufacturer Leshan Radio Company
File Size 672.10 KB
Description 20V P-Channel Enhancement-Mode MOSFET
Datasheet download datasheet LP2301LT1G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.